cystech electronics corp. spec. no. : c818k3 issued date : 2013.10.01 revised date : 2013.12.25 page no. : 1/8 BTN1053K3 cystek product specification npn epitaxial planar transistor BTN1053K3 features ? excellent h fe characteristics up to 1a ? low saturation voltage, v ce(sat) =0.15v(typ)@i c =1a, i b =50ma ? 5a peak pulse current ? pb-free lead plating and halogen-free package symbol outline ordering information device package shipping BTN1053K3-0-tb-g to-92l (pb-free lead plating and halogen-free package) 2000 pcs / tape & box BTN1053K3-0-bm-g to-92l (pb-free lead plating and halogen-free package) 500 pcs / bag, 10 bags/box, 10 boxes/carton BTN1053K3 to-92l b base c collector e emitter bv ceo 75v i c 2.5a r cesat(max) 250m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, tb : 2000 pcs / tape & box ; bm : 500 pcs/bag, 10 bags/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c818k3 issued date : 2013.10.01 revised date : 2013.12.25 page no. : 2/8 BTN1053K3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 75 v emitter-base voltage v ebo 5 v collector current(dc) i c 2.5 collector current(pulsed)( note 1) i cp 5 a power dissipation p d 900 mw thermal resistance, junction to ambient r ja 139 c/w operating junction temperature and storage range tj ; tstg -55~+150 c note 1: single pulse, pw 300 s, duty cycle 2%. 2: when the device is mounted on a fr-4 pcb measuring 15 ? 15 ? 0.6mm. 3: when the device is mounted on a ceramic substrate measuring 40 ? 40 ? 0.6mm. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 150 250 - v i c =100 a bv ces 150 250 v i c =100 a bv ceo 75 100 - v i c =10ma bv ebo 5 7.7 - v i e =100 a i cbo - 0.9 10 na v cb =120v i ces - 0.9 10 na v ce =120v i ebo - 0.6 10 na v eb =4v v ce(sat) 1 * - - 60 mv i c =200ma, i b =20ma v ce(sat) 2 * - - 200 mv i c =500ma, i b =20ma v ce(sat) 3 * - - 400 mv i c =1a, i b =10ma v ce(sat) 4 * - - 250 mv i c =1a, i b =50ma v ce(sat) 5 * - - 500 mv i c =2a, i b =100ma v be(sat) * - 0.9 1.2 v i c =1a, i b =50ma v be(on) * - 0.95 1.2 v v ce =2v, i c =3a h fe 1 * 330 - - - v ce =2v, i c =10ma h fe 2 * 340 600 820 - v ce =2v, i c =500ma h fe 3 * 120 300 - - v ce =2v, i c =1a h fe 4 * 10 25 - - v ce =2v, i c =4.5a f t - 140 - mhz v ce =10v, i c =50ma, f=100mhz cob - 23 - pf v cb =10v, i e =0a,f=1mhz *pulse test: pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c818k3 issued date : 2013.10.01 revised date : 2013.12.25 page no. : 3/8 BTN1053K3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200ua 300ua 400ua 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5ma 2ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2ma 4ma 6m a 10ma 20ma emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 20m a 50m a current gain vs collector current 10 100 1000 10000 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=1v current gain vs collector current 10 100 1000 10000 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=2v
cystech electronics corp. spec. no. : c818k3 issued date : 2013.10.01 revised date : 2013.12.25 page no. : 4/8 BTN1053K3 cystek product specification typical characteristics(cont.) current gain vs collector current 100 1000 10000 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=5v saturation voltage vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=10ib 125 75 25 saturation voltage vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125 75 25 vcesat@ic=20ib saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125 75 25 vcesat@ic=25ib saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=50ib 125 75 25 saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125 75 25 vcesat@ic=100ib
cystech electronics corp. spec. no. : c818k3 issued date : 2013.10.01 revised date : 2013.12.25 page no. : 5/8 BTN1053K3 cystek product specification typical characteristics(cont.) on voltage vs collector current 100 1000 100 1000 10000 collector current---ic(ma) on voltage---(mv) 125 vc e = 2v 75 25 capacitance vs reverse-biased voltage 10 100 1000 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob power derating curve 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw)
cystech electronics corp. spec. no. : c818k3 issued date : 2013.10.01 revised date : 2013.12.25 page no. : 6/8 BTN1053K3 cystek product specification to-92l taping outline millimeters dim item min. max. a1 component body width 4.70 5.10 a component body height 7.80 8.20 t component body thickness 3.70 4.10 d lead wire diameter 0.35 0.55 d1 lead wire diameter 1 0.60 0.80 p pitch of component 12.40 13.00 p0 feed hole pitch 12.50 12.90 p2 hole center to component center 6.05 6.65 f1, f2 lead to lead distance 2.20 2.80 h component alignment, f-r -1.00 1.00 w tape width 17.50 19.00 w0 hole down tape width 5.50 6.50 w1 hole position 8.50 9.50 w2 hole down tape position - 1.00 h height of component fr om tape center 19.00 21.00 h0 lead wire clinch height 15.50 16.50 l1 lead wire (tape portion) 2.50 - d0 feed hole diameter 3.80 4.20 t1 taped lead thickness 0.35 0.45 t2 carrier tape thickness 0.15 0.25 p1 position of hole 3.55 4.15 p component alignment -1.00 1.00
cystech electronics corp. spec. no. : c818k3 issued date : 2013.10.01 revised date : 2013.12.25 page no. : 7/8 BTN1053K3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds temperature(tp) 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c818k3 issued date : 2013.10.01 revised date : 2013.12.25 page no. : 8/8 BTN1053K3 cystek product specification to-92l dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.146 0.161 3.700 4.100 e 0.307 0.323 7.800 8.200 a1 0.050 0.062 1.280 1.580 e *0.05 *1.270 b 0.014 0.022 0.350 0.550 e1 0.096 0.104 2.440 2.640 b1 0.024 0.031 0.600 0.800 l 0.543 0.559 13.800 14.200 c 0.014 0.018 0.350 0.450 ? - 0.063 - 1.600 d 0.185 0.201 4.700 5.100 h 0.000 0.012 0.000 0.300 d1 0.157 - 4.000 - notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . n1053 marking: s t yle: pin 1.emitter 2.colle ctor 3.ba se 3-l ead t o -9 2l plasti c pa ckage cys t ek pa ck a g e code: k3 product name date code: y ear+month y ear: 7 2007, 8 20 08 month: 1 1, 2 2, ??? , 9 9, a 10, b 11 , c 12
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